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NEWS CENTER
Release time:2019-08-28
Sinochem New Network News The Russian Academy of Nuclear Research's Moscow School of Engineering Physics has collaborated with experts from the Russian Academy of Sciences to introduce new materials that can achieve the two-pole effect of resistance switching. These materials can be used to develop computers that store and process information similar to human brain neurons. The results of the study were published in the journal Nature Communications. Computers made with new materials will have new ways of processing information because their internal memory and hard drive will behave like neurons in the human brain. Researchers at the Moscow Institute of Engineering Physics at the National Institute of Nuclear Research have previously shown that this material exists in materials with high reluctance and high-temperature superconductors. Andrei Ivanov, associate professor of solid state physics and nanosystems at the Institute of Laser and Plasma Technology, commented: "The innovation of this work is that it uses lithography to help develop memory. The technology of element miniaturization." As a result, researchers selected epitaxial thin layers formed on the surface of barium titanate single crystal liners and confirmed the feasibility of using this epitaxial thin layer to fabricate a new generation of computer memristors.